Thin Film Deposition

  1. Molecular Beam Epitaxy (MBE) System
    • 10-12 torr UHV MBE chamber
    • Load lock chamber
    • Two electron beam guns
    • Three Knudsen cells
    • Total of eight target materials
    • EIPS (Electron Impact Photon Spectroscopy) for rate monitoring
    • PC controlled shuttering
    • Rotating, temperature controlled substrate holder to 1100 C
    • In situ RHEED, LEED and AES
    • Scanning Tunneling Microscopy (STM) in situ
    • Ar ion milling
    • Magneto-Optical Kerr Effect (MOKE) in situ
    • Residual Gas Analysis (RGA)
    • Uses: metallic multilayer deposition, thin magnetic films etc.
  2. Sputtering System
    • HV sputter deposition chamber
    • Rf and dc magnetron sputtering
    • Total of eight target materials
    • Twin load lock facility
    • Substrate holder temperature controlled to 1000 C
    • Non-Aligned Chopped power Oscillatory (NACHO) technique
    • Gas flow control panel for Ar, N2 and O2 partial pressure control
    • Uses: reactive sputtering of oxides, deposition of tunnel junctions etc.
  3. Sputtering System
    • HV dc sputter deposition chamber
    • Variable temperature substrate holder
    • Three S-gun targets
    • Uses: e.g. metallic multilayer deposition
  4. Custom Evaporation Chamber
    • HV evaporation chamber
    • Three K cells
    • Four target electron beam evaporator
    • Temperature controlled substrate holder to 500 C
    • Uses: preparation of FM/AFM bilayers for exchange bias studies

    Sample Processing Equipment

  5. Lithography
    • Fully outfitted photolithography laboratory
    • Cambridge EBMF 10.5 electron beam writing system for electron beam lithography
    • Electron beam lithography system based on JEOL SEM
    • Buehler electropolisher, controlled by a computer via a house-built relay box. Used to prepare porous alumina masks via anodization of aluminum.

    Structural Characterization Techniques

  6. Structure
    • High Power rotating anode Rigaku X-Ray diffraction system
    • High resolution Discover D8 x-ray diffraction system
    • Low angle reflectivity and high angle diffraction
    • Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM) and electron microprobe analysis
    • Thickness profilometer
    • STM, AES, RHEED and LEED available in situ in MBE system

    Magnetic and Transport Characterization Techniques

  7. 9 T superconducting magnet
    • Variable temperature insert from 1.5 K to 300 K
    • Used for measurement of electrical transport properties such as magnetoresistance and Hall effect
  8. 7 T superconducting magnet for MOKE measurements
    • Optical cryostat with a superconducting coil with a horizontal field
    • Variable temperature insert from 2.4 K to 300 K
    • Magneto-optical Kerr setup with stabilized HeNe-Laser; Capability to detect transversal and longitudinal magnetization component
    • Used to measure magnetization hysteresis curves on nanostructured exchange bias systems
  9. Vibrating Sample Magnetometer (VSM)
    • Magnetometer with 10-5 emu sensitivity
    • Electromagnet capable of 1.8 T
  10. SQUID Magnetometer
    • Quantum Design MPMS system
    • 1.8K to 400K temperature range
    • 7 T superconducting magnet
    • 10-8 emu sensitivity
    • Fully automated
  11. Screened Enclosure (Faraday Cage)
    • Screened room for tunneling experiments
    • Two liquid helium dewars down to 1.5 K
    • 5 T superconducting magnet
  12. System for measurement of differential conductance of tunnel junctions as a function of voltage, temperature and magnetic field
  13. Closed cycle refrigerator based transport system

    Nanosensor Lab

  14. Organic Molecular Beam Epitaxy (OMBE) system I
    • 10-10 torr UHV chamber.
    • Load lock chamber.
    • Two electron beam guns x 4 crucibles each.
    • Low temperature molecular beam evaporation source.
    • Four dual head quartz crystal sensors for rate monitoring.
    • Rotating, DC biased, temperature controlled to 300 C substrate holder.
    • In situ floating shadow masking, positioning 20 micron or more over substrate, moving range 1 cm x 1 cm with 5 micron resolution.
    • 3 cm DC Kaufman ion gun.
    • Tectra plasma source.
    • Residual gas analyzer (RGA).
    • Ion flux probe.
    • Uses: organic metallic deposition, binary alloys deposition, complex in-situ multi layer devices by mechanical masking
  15. Organic Molecular Beam Deposition (OMBD) system II
    • 5x10-9 torr UHV chamber.
    • Load lock chamber.
    • Four low temperature effusion cells for organic deposition.
    • Rotating substrate holder for samples up to 1 inch diameter.
    • Temperature controlled sample holder cooled/heated (while rotating) from -130 C to 450 C
    • Dual head quartz crystal sensors for rate monitoring.
    • Electron beam gun with 4 pockets.
    • Shadow mask with +/- 1.5 cm x,z motion and 10 cm y motion.
  16. Flow systems for electrical or optical characterization of gas sensors
    • 4"x6"x3" stainless steel sample chamber.
    • Closed-loop temperature control: 0 - 100 0.05 C, 20 min. response time.
    • Closed-loop relative humidity control: 0 - 100% 2% RH, 10 min. response time.
    • Open-loop permanent gas concentration control: 0 - 40000 4 ppm, 2 min response time.
    • Open-loop volatile organics concentration control: up to 4 volatile organics, 2 min. response time.
    • Outer enclosure with closed-loop temperature control.
    • Fully automated computer controlled.
  17. Sputter coater system with three film targets
  18. Microscope with CCD camera
  19. Annealing furnace with gas flow monitoring capabilities
  20. Inspection microscopes

(c) 2007 Ivan K. Schuller       -       designed by Thomas Gredig