• 10^-12 torr UHV MBE chamber
• Load lock chamber
• Two electron beam guns
• Three Knudsen cells
• Total of eight target materials
• EIPS (Electron Impact Photon Spectroscopy) for rate monitoring
• PC controlled shuttering
• Rotating, temperature controlled substrate holder to 1100 C
• In situ RHEED, LEED and AES
• Scanning Tunneling Microscopy (STM) in situ
• Ar ion milling
• Magneto-Optical Kerr Effect (MOKE) in situ
• Residual Gas Analysis (RGA)
• Uses: metallic multilayer deposition, thin magnetic films etc.

• HV sputter deposition chamber
• Rf and dc magnetron sputtering
• Total of eight target materials
• Twin load lock facility
• Substrate holder temperature controlled to 1000 C
• Non-Aligned Chopped power Oscillatory (NACHO) technique
• Gas flow control panel for Ar, N₂ and O₂ partial pressure control
• Uses: reactive sputtering of oxides, deposition of tunnel junctions etc.

• HV dc sputter deposition chamber
• Variable temperature substrate holder
• Three S-gun targets
• Uses: e.g. metallic multilayer deposition

• HV evaporation chamber
• Three K cells
• Four target electron beam evaporator
• Temperature controlled substrate holder to 500 C
• Uses: preparation of FM/AFM bilayers for exchange bias studies

Sample Processing Equipment

• Fully outfitted photolithography laboratory
• Cambridge EBMF 10.5 electron beam writing system for electron beam lithography
• Electron beam lithography system based on JEOL SEM
• Buehler electropolisher, controlled by a computer via a house-built relay box. Used to prepare porous alumina masks via anodization of aluminum.

Structural Characterization Techniques

• High Power rotating anode Rigaku X-Ray diffraction system
• High resolution Discover D8 x-ray diffraction system
• Low angle reflectivity and high angle diffraction
• Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM) and electron microprobe analysis
• Thickness profilometer
• STM, AES, RHEED and LEED available in situ in MBE system

Magnetic and Transport Characterization Techniques

• Variable temperature insert from 1.5 K to 300 K
• Used for measurement of electrical transport properties such as magnetoresistance and Hall effect

• Optical cryostat with a superconducting coil with a horizontal field
• Variable temperature insert from 2.4 K to 300 K
• Magneto-optical Kerr setup with stabilized HeNe-Laser; Capability to detect transversal and longitudinal magnetization component
• Used to measure magnetization hysteresis curves on nanostructured exchange bias systems

• Magnetometer with 10^-5 emu sensitivity
• Electromagnet capable of 1.8 T

• Quantum Design MPMS system
• 1.8K to 400K temperature range
• 7 T superconducting magnet
• 10^-8 emu sensitivity
• Fully automated

• Screened room for tunneling experiments
• Two liquid helium dewars down to 1.5 K
• 5 T superconducting magnet

Nanosensor Lab

• 10-10 torr UHV chamber.
• Load lock chamber.
• Two electron beam guns x 4 crucibles each.
• Low temperature molecular beam evaporation source.
• Four dual head quartz crystal sensors for rate monitoring.
• Rotating, DC biased, temperature controlled to 300° C substrate holder.
• In situ floating shadow masking, positioning 20 micron or more over substrate, moving range 1 cm x 1 cm with 5 micron resolution.
• 3 cm DC Kaufman ion gun.
• Tectra plasma source.
• Residual gas analyzer (RGA).
• Ion flux probe.
• Uses: organic metallic deposition, binary alloys deposition, complex in-situ multi layer devices by mechanical masking

• 5x10-9 torr UHV chamber.
• Load lock chamber.
• Four low temperature effusion cells for organic deposition.
• Rotating substrate holder for samples up to 1 inch diameter.
• Temperature controlled sample holder cooled/heated (while rotating) from -130 C to 450 C
• Dual head quartz crystal sensors for rate monitoring.
• Electron beam gun with 4 pockets.
• Shadow mask with +/- 1.5 cm x,z motion and 10 cm y motion.

• 4"x6"x3" stainless steel sample chamber.
• Closed-loop temperature control: 0 - 100 ± 0.05° C, 20 min. response time.
• Closed-loop relative humidity control: 0 - 100% ± 2% RH, 10 min. response time.
• Open-loop permanent gas concentration control: 0 - 40000 ± 4 ppm, 2 min response time.
• Open-loop volatile organics concentration control: up to 4 volatile organics, 2 min. response time.
• Outer enclosure with closed-loop temperature control.
• Fully automated computer controlled.